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【SI4100DYT1E3 Transistors - FETs, MOSFETs - Single VISHAY】【IGB10N60】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI4100DYT1E3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 100V 6.8A 8-SOIC

Series:

TrenchFET

Packaging:

Cut Tape (CT)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

Vgs(th) (Max) @ Id:

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

600pF @ 50V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

2.5W (Ta), 6W (Tc)

Rds On (Max) @ Id, Vgs:

63 mOhm @ 4.4A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO

Package / Case:

8-SOIC (0.154", 3.90mm Width)

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Part NumberPart Number BrandD/CQtyCountry /
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SI4100DY-T1-E3

SI4100DY-T1-E3 VISHAY13+240Hong Kong
JFJ Electronics Co.,Limited  13

Si4100DY-T1-E3

Si4100DY-T1-E3 Vishay Semiconductors28650Hong Kong
HongKong Wanghua Technology Limited 4
Warranty

SI4100DY-T1-E3

SI4100DY-T1-E3 VISHAY2075USA
Chip 1 Exchange USA, Inc.  1
STRC

SI4100DY-T1-E3

SI4100DY-T1-E3 VISHAY2016+850000China
Far East Electronics Technology Limited  12

SI4100DY-T1-E3

SI4100DY-T1-E3 1500Hong Kong
Toyota (H.K) Co., Limited 7

IGB10N60T

IGB10N60T Infineon Technologies11786Hong Kong
HongKong Wanghua Technology Limited 4
Warranty

IGB10N60T

IGB10N60T TDK Corporation1000Hong Kong
ONSTAR ELECTRONICS CO., LIMITED  2

IGB10N60TATMA1

IGB10N60TATMA1 Infineon Technologies2016+15000China
MY Group (Asia) Limited  13

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