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Home > Part Number Index > Index 16 > Product (Page: 3480) > SI4200DYT1GE3

What is SI4200DYT1GE3?

Part Number: SI4200DYT1GE3
Product Name: SI4200DYT1GE3 Transistors - FETs, MOSFETs - Arrays
Merchant-Specific Identifier: SI4200DYT1GE3
Category: Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Brand: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Series: TrenchFET
Packaging: Tape & Reel (TR)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 13V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Rated 5/5 based on 5 customer reviews
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays

SI4200DYT1GE3

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Part NO. : SI4200DY-T1-GE3

Brand : VISHAY  

Date Code : 20+

Qty : 5000

Unit Price :
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SI4200DYT1GE3

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Part NO. : SI4200DY-T1-GE3

Brand : VISHAY/ 

Date Code : 2022

Qty : 14034
USD 0

Part NO. : SI4200DY-T1-GE3

Brand : VISHAY/ 

Date Code :

Qty : 10500
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Part NO. : SI4200DY-T1-GE3

Brand : VISHAY 

Date Code : 20+

Qty : 3034
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Part NO. : SI4200DY-T1-GE3

Brand : VISH 

Date Code : 1907

Qty : 2500
USD 0

Part NO. : SI4200DY-T1-GE3

Brand : VISHAY/ 

Date Code : 2022

Qty : 14034
USD 0

Part NO. : SI4200DY-T1-GE3

Brand : VISHAY/ 

Date Code :

Qty : 10500
USD 0

Part NO. : SI4200DY-T1-GE3

Brand : VISHAY 

Date Code : 20+

Qty : 3034
USD 0

Part NO. : SI4200DY-T1-GE3

Brand : VISH 

Date Code : 1907

Qty : 2500
USD 0

This is a cached page collected on 2/1/2024 10:32:29 PM, to receive our suppliers' latest quotation, please click View Today's Offer >>
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