【SI4403CDYT1GE3 Transistors - FETs, MOSFETs - Single VISHAY】【5SGXEB6R2H43C2N】【14806995】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI4403CDYT1GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET P-CH 20V 13.4A 8SOIC

Series:

TrenchFET

Packaging:

Cut Tape (CT)

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

13.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

90nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:

2380pF @ 10V

Vgs (Max):

±8V

FET Feature:

-

Power Dissipation (Max):

5W (Tc)

Rds On (Max) @ Id, Vgs:

15.5 mOhm @ 9A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO

Package / Case:

8-SOIC (0.154", 3.90mm Width)

1 - 5 of 5 Record(s)
SI4403CDYT1GE3
 Part NumberBrandD/CQtyCompany

SI4403CDY-T1-GE3

VISHAY13+3000CHIPMALL ELECTRONICS LIMITED    3

SI4403CDY-T1-GE3

VISHAY2679Hongkong Intercell Electronics Co.,Limited    7

SI4403CDY-T1-GE3

25734Hong Kong In Fortune Electronics Co., Limited    12

SI4403CDY-T1-GE3
 

VISHAY2016+850000Far East Electronics Technology Limited    12

SI4403CDY-T1-GE3

VISHAY1515+2101Sinno Electronics Co., Limited    8

Related Part Number

5SGXEB6R2H43C2N | 14806995 | SI4404DY | SI4404DYT1E3 | SI4404DYT1GE3 | SI4406DY | SI4407 | SI4408BDYT1E3 | SI4409 | SI4410 | SI4410BDY
SI4403CDYT1GE3 Ref.:
[hkinbatch20171020]
[HGCacheDateZOIBOIIG]
[HGReferer_STC_Overview]
[HKIN20171020GESTYLE]
[HKIN20171020MDPartDetails]

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