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【SI7230DNT1GE3 Transistors - FETs, MOSFETs - Single VISHAY】【IM2412SA24/12V400MA】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI7230DNT1GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 30V 9A PPAK 1212-8

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

20nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

-

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

1.5W (Ta)

Rds On (Max) @ Id, Vgs:

12 mOhm @ 14A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK 1212-8

Package / Case:

PowerPAK 1212-8

Search For SI7230DNT1GE3 - SI7230DNT1GE3 Product Information : 

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STRCWarrantyNewAndOriginal

SI7230DN-T1-GE3

SI7230DN-T1-GE3 VISHAY12000China
Hong Kong In Fortune Electronics Co., Limited  13

SI7230DN-T1-GE3

SI7230DN-T1-GE3 VISHAY08+6355China
Ande Electronics Co., Limited  12

SI7230DN-T1-GE3

SI7230DN-T1-GE3 VISHAY30300Hong Kong
MASSTOCK ELECTRONICS LIMITED 1
STRC

SI7230DN-T1-GE3

SI7230DN-T1-GE3 VISHAY12000China
Sinno Electronics Co., Limited  8
STRC

SI7230DN-T1-GE3

SI7230DN-T1-GE3 VISHAY5000China
Acon Electronics Limited 12

IM2412S

IM2412S XP1601+29628Singapore
Splendent Technologies Pte Ltd  4

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