| Part Number: | SI8851EDBT2E1 |
| Product Name: | SI8851EDBT2E1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SI8851EDBT2E1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET P-CH 20V 7.7A MICRO FOOT |
| Series: | TrenchFET |
| Packaging: | Tape & Reel (TR) |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 7.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 6900pF @ 10V |
| Vgs (Max): | ±8V |
| FET Feature: | - |
| Power Dissipation (Max): | 660mW (Ta) |
| Rds On (Max) @ Id, Vgs: | 8 mOhm @ 7A, 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Power Micro Foot |
| Package / Case: | 30-XFBGA |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : SI8851EDB-T2-E1
Brand : Vishay Semiconductors
Date Code : 21
Qty : 3000
Unit Price :
(USD)
USD
0
Part Number
Brand
D/C
Qty
Part NO. : SI8851EDB-T2-E1
Brand : VISHAY
Date Code : 22+
Qty : 42120
USD 0
Part NO. : SI8851EDB-T2-E1
Brand : VISHAY
Date Code : 21+
Qty : 30000
USD 0
Part NO. : SI8851EDB-T2-E1
Brand : VISHAY
Date Code : 21+
Qty : 30000
USD 0
Part NO. : SI8851EDB-T2-E1
Brand : VISHAY
Date Code : 2022
Qty : 41000
USD 0
Part NO. : SI8851EDB-T2-E1
Brand : VISHAY
Date Code : 22+
Qty : 42120
USD 0
Part NO. : SI8851EDB-T2-E1
Brand : VISHAY
Date Code : 21+
Qty : 30000
USD 0
Part NO. : SI8851EDB-T2-E1
Brand : VISHAY
Date Code : 21+
Qty : 30000
USD 0
Part NO. : SI8851EDB-T2-E1
Brand : VISHAY
Date Code : 2022
Qty : 41000
USD 0
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