| Part Number: | SIE882DFT1GE3 |
| Product Name: | SIE882DFT1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SIE882DFT1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 25V 60A POLARPAK |
| Series: | TrenchFET |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 25V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 145nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 6400pF @ 12.5V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 5.2W (Ta), 125W (Tc) |
| Rds On (Max) @ Id, Vgs: | 1.4 mOhm @ 20A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 10-PolarPAK (L) |
| Package / Case: | 10-PolarPAK (L) |
Part Number
Brand
D/C
Qty
Part NO. : SiE882DF-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 35800
USD 0
Part NO. : SIE882DF-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 35800
USD 0
Part NO. : SIE882DF-T1-GE3
Brand : Vishay
Date Code :
Qty : 19000
USD 0
Part NO. : SIE882DF-T1-GE3
Brand : Vishay Siliconix
Date Code :
Qty : 1000
USD 0
Part NO. : SIE882DF-T1-GE3
Brand : Vishay Siliconix
Date Code : 23+
Qty : 16660
USD 0
Part NO. : SiE882DF-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 35800
USD 0
Part NO. : SIE882DF-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 35800
USD 0
Part NO. : SIE882DF-T1-GE3
Brand : Vishay
Date Code :
Qty : 19000
USD 0
Part NO. : SIE882DF-T1-GE3
Brand : Vishay Siliconix
Date Code :
Qty : 1000
USD 0
Part NO. : SIE882DF-T1-GE3
Brand : Vishay Siliconix
Date Code : 23+
Qty : 16660
USD 0
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