Part Number: | SIHB35N60EGE3 |
Product Name: | SIHB35N60EGE3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SIHB35N60EGE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET N-CH 600V 32A D2PAK TO263 |
Series: | - |
Packaging: | Tube |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 132nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2760pF @ 100V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 250W (Tc) |
Rds On (Max) @ Id, Vgs: | 94 mOhm @ 17A, 10V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
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Part NO. : SIHB35N60E-GE3
Brand : Vishay Siliconix
Date Code :
Qty : 18000
USD 0
Part NO. : SIHB35N60E-GE3
Brand : Vishay Siliconix
Date Code : 23+
Qty : 16660
USD 0
Part NO. : SIHB35N60E-GE3
Brand : Vishay Siliconix
Date Code : 21+
Qty : 1792
USD 0
Part NO. : SIHB35N60E-GE3
Brand : Vishay Siliconix
Date Code : 21+
Qty : 81630
USD 0
Part NO. : SIHB35N60E-GE3
Brand : Vishay Siliconix
Date Code :
Qty : 18000
USD 0
Part NO. : SIHB35N60E-GE3
Brand : Vishay Siliconix
Date Code :
Qty : 18000
USD 0
Part NO. : SIHB35N60E-GE3
Brand : Vishay Siliconix
Date Code : 23+
Qty : 16660
USD 0
Part NO. : SIHB35N60E-GE3
Brand : Vishay Siliconix
Date Code : 21+
Qty : 1792
USD 0
Part NO. : SIHB35N60E-GE3
Brand : Vishay Siliconix
Date Code : 21+
Qty : 81630
USD 0
Part NO. : SIHB35N60E-GE3
Brand : Vishay Siliconix
Date Code :
Qty : 18000
USD 0