Part Number: | SIS435DNTT1GE3 |
Product Name: | SIS435DNTT1GE3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SIS435DNTT1GE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET P-CH 20V 30A 1212-8 |
Series: | TrenchFET |
Packaging: | Cut Tape (CT) |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: | 5700pF @ 10V |
Vgs (Max): | ±8V |
FET Feature: | - |
Power Dissipation (Max): | 3.7W (Ta), 39W (Tc) |
Rds On (Max) @ Id, Vgs: | 5.4 mOhm @ 13A, 4.5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK 1212-8 |
Package / Case: | PowerPAK 1212-8 |
Part Number
Brand
D/C
Qty
Part NO. : SIS435DNT-T1-GE3
Brand : VISHAY
Date Code :
Qty : 68666
USD 0
Part NO. : SIS435DNT-T1-GE3
Brand : ORIGINAL
Date Code : 22+
Qty : 5250
USD 0
Part NO. : SIS435DNT-T1-GE3
Brand : Vishay Siliconix
Date Code : 23+
Qty : 16660
USD 0
Part NO. : SIS435DNT-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 35800
USD 0
Part NO. : SIS435DNT-T1-GE3
Brand : VISHAY
Date Code : 22+
Qty : 16890
USD 0
Part NO. : SIS435DNT-T1-GE3
Brand : VISHAY
Date Code :
Qty : 68666
USD 0
Part NO. : SIS435DNT-T1-GE3
Brand : ORIGINAL
Date Code : 22+
Qty : 5250
USD 0
Part NO. : SIS435DNT-T1-GE3
Brand : Vishay Siliconix
Date Code : 23+
Qty : 16660
USD 0
Part NO. : SIS435DNT-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 35800
USD 0
Part NO. : SIS435DNT-T1-GE3
Brand : VISHAY
Date Code : 22+
Qty : 16890
USD 0