| Part Number: | SQJ479EPT1 |
| Product Name: | SQJ479EPT1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SQJ479EPT1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET P-CH 80V 32A SO8 |
| Series: | Automotive, AEC-Q101, TrenchFET |
| Packaging: | |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 80V |
| Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 68W (Tc) |
| Rds On (Max) @ Id, Vgs: | 33 mOhm @ 10A, 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK SO-8 |
| Package / Case: | PowerPAK SO-8 |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : SQJ479EP-T1_GE3
Brand : VISHA
Date Code : 23+
Qty : 50000
Unit Price :
(USD)
USD
0
Part NO. : SQJ479EP-T1_GE3
Brand : VISHAY
Date Code : 22+
Qty : 9000
Unit Price :
(USD)
USD
0
Part NO. : SQJ479EP-T1_GE3
Brand : VISHAY(威世)
Date Code : 23+
Qty : 111000
Unit Price :
(USD)
USD
0
Part NO. : SQJ479EP-T1_GE3
Brand : VISHAY
Date Code : 2322+
Qty : 9000
Unit Price :
(USD)
USD
0
Part NO. : SQJ479EP-T1_GE3
Brand : VISHAY
Date Code : 21+/22+
Qty : 10000
Unit Price :
(USD)
USD
0
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