【STB18N60M2 Transistors - FETs, MOSFETs - Single STM】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

STB18N60M2

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

STMicroelectronics

Description:

MOSFET N-CH 600V D2PAK

Series:

MDmesh,II Plus

Packaging:

Cut Tape (CT)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600V

Current - Continuous Drain (Id) @ 25°C:

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

21.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

791pF @ 100V

Vgs (Max):

±25V

FET Feature:

-

Power Dissipation (Max):

110W (Tc)

Rds On (Max) @ Id, Vgs:

280 mOhm @ 6.5A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

D2PAK

Package / Case:

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

1 - 5 of 5 Record(s)
STB18N60M2
 Part NumberBrandD/CQtyCompany

STB18N60M2

STM14+337Ande Electronics Co., Limited    12

STB18N60M2

STM12000SUNTOP SEMICONDUCTOR CO., LIMITED    3

STB18N60M2

STMicroelectronics18000MY Group (Asia) Limited    13

STB18N60M2

STM13000HOPSKY HK LIMITED   2

STB18NM60N

65000Hong Kong In Fortune Electronics Co., Limited    13

Related Part Number

STB18N65M5 | STB18NF25 | STB16NK65Z-S | STB16NS25T4 | STB16PF06LT4 | STB170NF04 | STB180N55F3 | STB185N55F3 | STB18N55M5 | STB18N65M5 | STB18NF25
STB18N60M2 Ref.:
[hkinbatch20180420]
[HGCacheDateZOIBOPZE]
[HGReferer_TRC]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

STB18N60M2 Related Keywords in 2018 USA

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