Part Number: | EPC2106ENGRT |
Product Name: | EPC2106ENGRT Transistors - FETs, MOSFETs - Arrays |
Merchant-Specific Identifier: | EPC2106ENGRT |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays |
Brand: | EPC |
Description: | TRANS GAN 2N-CH 100V BUMPED DIE |
Series: | eGaN |
Packaging: | Tape & Reel (TR) |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 2A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 600µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.73nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 75pF @ 50V |
Power - Max: | - |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
Part Number
Brand
D/C
Qty
Part NO. : EPC2106ENGRT
Brand : EPC
Date Code :
Qty : 14000
USD 0
Part NO. : EPC2106ENGRT
Brand : EPC
Date Code :
Qty : 5088
USD 0
Part NO. : EPC2106ENGRT
Brand : EPC
Date Code :
Qty : 14000
USD 0
Part NO. : EPC2106ENGRT
Brand : EPC
Date Code : 21+
Qty : 1000
USD 0
Part NO. : EPC2106ENGRT
Brand : EPC
Date Code : 22+
Qty : 9000
USD 0
Part NO. : EPC2106ENGRT
Brand : EPC
Date Code :
Qty : 14000
USD 0
Part NO. : EPC2106ENGRT
Brand : EPC
Date Code :
Qty : 5088
USD 0
Part NO. : EPC2106ENGRT
Brand : EPC
Date Code :
Qty : 14000
USD 0
Part NO. : EPC2106ENGRT
Brand : EPC
Date Code : 21+
Qty : 1000
USD 0
Part NO. : EPC2106ENGRT
Brand : EPC
Date Code : 22+
Qty : 9000
USD 0