| Part Number: | EPC2108ENGRT |
| Product Name: | EPC2108ENGRT Transistors - FETs, MOSFETs - Arrays |
| Merchant-Specific Identifier: | EPC2108ENGRT |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays |
| Brand: | EPC |
| Description: | TRANS GAN 3N-CH BUMPED DIE |
| Series: | eGaN |
| Packaging: | Tape & Reel (TR) |
| FET Type: | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| FET Feature: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 60V, 100V |
| Current - Continuous Drain (Id) @ 25°C: | 1.7A, 500mA |
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 100µA, 2.5V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs: | 0.22nC @ 5V, 0.044nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 22pF @ 30V, 7pF @ 30V |
| Power - Max: | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 9-VFBGA |
| Supplier Device Package: | 9-BGA (1.35x1.35) |
Part Number
Brand
D/C
Qty
EPC2108ENGRT EPC
EPC
15000
USD 0
EPC2108ENGRT EPC 21+
EPC
21+
81630
USD 0
EPC2108ENGRT 2020+
2020+
37500
USD 0
EPC2108ENGRT EPC
EPC
15000
USD 0
EPC2108ENGRT EPC 21
EPC
21
4461
USD 0
EPC2108ENGRT EPC
EPC
15000
USD 0
EPC2108ENGRT EPC 21+
EPC
21+
81630
USD 0
EPC2108ENGRT 2020+
2020+
37500
USD 0
EPC2108ENGRT EPC
EPC
15000
USD 0
EPC2108ENGRT EPC 21
EPC
21
4461
USD 0
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