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【MMDF3N04HDR2G】【ON】【ON SEMICONDUCTOR】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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MOSFET 2N-CH 40V 3.4A 8-SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25~C: 3.4A Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) @ Vds: 900pF @ 32V Power - Max: 1.39W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SOIC HKinDataSheet_ZO1GOSIT
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MMDF3N04HDR2G

MMDF3N04HDR2G  ON 1000Hong Kong
ONSTAR ELECTRONICS CO., LIMITED E-Catalog 2nd Year Member

MMDF3N04HDR2G

MMDF3N04HDR2G  ON 0747+SOP8 3666China
Hongkong Intercell Electronics Co.,Limited E-Catalog 7th Year Member

MMDF3N04HDR2G

MMDF3N04HDR2G  ON 06+ 5000China
C&G Electronics (HK) Co., Ltd E-Catalog 1st Year Member

MMDF3N04HDR2G

MMDF3N04HDR2G  ON SEMICONDUCTO... 9433USA
Val Technologies, Inc E-Catalog 14th Year Member

MMDF3N04HDR2G

MMDF3N04HDR2G  ON Semiconducto... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 12th Year Member

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MOSFET 2N-CH 40V 3.4A 8-SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25~C: 3.4A Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) @ Vds: 900pF @ 32V Power - Max: 1.39W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SOIC HKinDataSheet_ZO1GOSIT
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