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【MMDF3N04HDR2G】【Transistors - FETs, MOSFETs - Arrays】【O】【ON】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

MMDF3N04HDR2G

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

ON Semiconductor

Description:

MOSFET 2N-CH 40V 3.4A 8-SOIC

Series:

-

Packaging:

Digi-Reel

FET Type:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

3.4A

Rds On (Max) @ Id, Vgs:

80 mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

28nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

900pF @ 32V

Power - Max:

1.39W

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package:

8-SOIC

Search For MMDF3N04HDR2G - MMDF3N04HDR2G Product Information : 

MOSFET 2N-CH 40V 3.4A 8-SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25~C: 3.4A Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) @ Vds: 900pF @ 32V Power - Max: 1.39W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SOIC HKinDataSheet_ZO1GOSIT
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MMDF3N04HDR2G

MMDF3N04HDR2G  O 16+SOP8 104793China
Ande Electronics Co., Limited E-Catalog 12th Year Member

MMDF3N04HDR2G

MMDF3N04HDR2G  ON 1000Hong Kong
ONSTAR ELECTRONICS CO., LIMITED E-Catalog 2nd Year Member

MMDF3N04HDR2G

MMDF3N04HDR2G  ON SOP8 5000China
Centrita Technology (HK) Co., Limited E-Catalog 8th Year Member

MMDF3N04HDR2G

MMDF3N04HDR2G  ON Semiconducto... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 13th Year Member

MMDF3N04HDR2G

MMDF3N04HDR2G  ON SEMICONDUCTO... 9433USA
Val Technologies, Inc E-Catalog 15th Year Member

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MOSFET 2N-CH 40V 3.4A 8-SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25~C: 3.4A Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) @ Vds: 900pF @ 32V Power - Max: 1.39W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SOIC HKinDataSheet_ZO1GOSIT
[HKINOLDPD] [HKIN20171020MDPartDetails]

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