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【NTZD3152PT1H】【ON】【ON SEMICONDUCTOR】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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MOSFET 2P-CH 20V 0.43A SOT563 Series: - FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 430mA Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) @ Vds: 175pF @ 16V Power - Max: 250mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563-6 HKinDataSheet_ZO1GOSIT
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NTZD3152PT1H

NTZD3152PT1H  ON 16+SOT-563 12500
In-Stock
Hong Kong
C & I Semiconductors Co., Limited E-Catalog 8th Year Member

NTZD3152PT1H

NTZD3152PT1H  ON Semiconducto... 16212Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

NTZD3152PT1H

NTZD3152PT1H  ON 11+SC70-6 1000China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

NTZD3152PT1H

NTZD3152PT1H  ON Semiconducto... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 12th Year Member

NTZD3152PT1H

NTZD3152PT1H  ON 12500Taiwan
Sunrich-Tech Corporation 6th Year Member

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MOSFET 2P-CH 20V 0.43A SOT563 Series: - FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 430mA Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) @ Vds: 175pF @ 16V Power - Max: 250mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563-6 HKinDataSheet_ZO1GOSIT
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