| Part Number: | SI2302CDST1GE3 |
| Product Name: | SI2302CDST1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SI2302CDST1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 20V 2.6A SOT23-3 |
| Series: | TrenchFET |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 2.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id: | 850mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| Vgs (Max): | ±8V |
| FET Feature: | - |
| Power Dissipation (Max): | 710mW (Ta) |
| Rds On (Max) @ Id, Vgs: | 57 mOhm @ 3.6A, 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : SI2302CDS-T1-GE3
Brand : VISHAY
Date Code : 21+CN
Qty : 36000
Unit Price :
(USD)
USD
0
Part NO. : SI2302CDS-T1-GE3
Brand : HIROSE
Date Code : 17+
Qty : 3300
Unit Price :
(USD)
USD
0
Part NO. : SI2302CDS-T1-GE3
Brand : VISHAY
Date Code : 2021
Qty : 120000
Unit Price :
(USD)
USD
0
Part NO. : SI2302CDS-T1-GE3
Brand : Vishay
Date Code : 23+
Qty : 191000
Unit Price :
(USD)
USD
0
Part NO. : SI2302CDS-T1-GE3
Brand : VISHAY/威世
Date Code : 21+
Qty : 1000
Unit Price :
(USD)
USD
0
Contact Us
Copyright © 2024 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
