Part Number: | SI2312BDST1E3 |
Product Name: | SI2312BDST1E3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SI2312BDST1E3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET N-CH 20V 3.9A SOT23-3 |
Series: | TrenchFET |
Packaging: | |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Vgs(th) (Max) @ Id: | 850mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Vgs (Max): | ±8V |
FET Feature: | - |
Power Dissipation (Max): | 750mW (Ta) |
Rds On (Max) @ Id, Vgs: | 31 mOhm @ 5A, 4.5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 (TO-236) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : SI2312BDS-T1-E3
Brand : VISHAY
Date Code : 22+
Qty : 52000
Unit Price :
(USD)
USD
0
Part NO. : SI2312BDS-T1-E3
Brand : VISHAY
Date Code : 2208+
Qty : 12000
Unit Price :
(USD)
USD
0
Part NO. : SI2312BDS-T1-E3
Brand : VISHAY
Date Code : 22+
Qty : 52000
Unit Price :
(USD)
USD
0
Part NO. : Si2312BDS-T1-E3
Brand : VISHAY
Date Code :
Qty : 90000
Unit Price :
(USD)
USD
0
Part NO. : SI2312BDS-T1-E3
Brand : VISHAY
Date Code : 21+
Qty : 9000
Unit Price :
(USD)
USD
0