【SI2321DS-T1-E3 Transistors - FETs, MOSFETs - Single VISHAY】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI2321DS-T1-E3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET P-CH 20V 2.9A SOT-23

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

2.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

13nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

715pF @ 6V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

710mW (Ta)

Rds On (Max) @ Id, Vgs:

57 mOhm @ 3.3A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3 (TO-236)

Package / Case:

TO-236-3, SC-59, SOT-23-3

1 - 5 of 5 Record(s)
SI2321DST1E3
 Part NumberBrandD/CQtyCompany
STRC

SI2321DS-T1-E3
 

1440Hong Kong In Fortune Electronics Co., Limited    13
STRCWarranty

SI2321DS-T1-E3
 

VISHAY16+83000Yingxinyuan INT'L (Group) Limited    15

SI2321DS-T1-E3

VISHAY08+826Ande Electronics Co., Limited    12

SI2321DS-T1-E3

VISHAY08+86TY International components Limited    8

SI2321DS-T1-E3

VISHAY30300MASSTOCK ELECTRONICS LIMITED   1

Related Part Number

SI2323CDS-T1-GE3 | SI2323DDS-T1-GE3 | SI2316DS-T1-E3 | SI2318CDS-T1-GE3 | SI2318DST1E3 | SI2318DS-T1-GE3 | SI2319CDS-T1-GE3 | SI2319DST1E3 | SI2319DS-T1-GE3 | SI2323CDS-T1-GE3 | SI2323DDS-T1-GE3
SI2321DS-T1-E3 Ref.:
[hkinbatch20180420]
[HGCacheDateZOIBOBIG]
[HGReferer_TRC]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

SI2321DS-T1-E3 Related Keywords in 2018 USA

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