Part Number: | SI2337DST1GE3 |
Product Name: | SI2337DST1GE3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SI2337DST1GE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET P-CH 80V 2.2A SOT23-3 |
Series: | TrenchFET |
Packaging: | Cut Tape (CT) |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 40V |
Vgs (Max): | ±20V |
FET Feature: | - |
Power Dissipation (Max): | 760mW (Ta), 2.5W (Tc) |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 1.2A, 10V |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 (TO-236) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : SI2337DS-T1-GE3
Brand : VISHAY
Date Code : 23+
Qty : 32000
Unit Price :
(USD)
USD
0
Part NO. : SI2337DS-T1-GE3
Brand : VISHAY(威世)
Date Code : 23+
Qty : 9000
Unit Price :
(USD)
USD
0
Part NO. : SI2337DS-T1-GE3
Brand : VISHAY
Date Code : 22+
Qty : 3000
Unit Price :
(USD)
USD
0
Part NO. : SI2337DS-T1-GE3
Brand : Vishay Semiconductors
Date Code : 21
Qty : 3000
Unit Price :
(USD)
USD
0
Part Number
Brand
D/C
Qty