Part Number: | SI5509DCT1GE3 |
Product Name: | SI5509DCT1GE3 Transistors - FETs, MOSFETs - Arrays |
Merchant-Specific Identifier: | SI5509DCT1GE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays |
Brand: | Vishay Siliconix |
Description: | MOSFET N/P-CH 20V 6.1A 1206-8 |
Series: | TrenchFET |
Packaging: | Tape & Reel (TR) |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 6.1A, 4.8A |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 455pF @ 10V |
Power - Max: | 4.5W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 1206-8 ChipFET |
Part Number
Brand
D/C
Qty
Part NO. : SI5509DC-T1-GE3
Brand : Vishay Siliconix
Date Code :
Qty : 8000
USD 0
Part NO. : SI5509DC-T1-GE3
Brand : VISHAY/
Date Code : 20+/21+
Qty : 5000000
USD 0
Part NO. : SI5509DC-T1-GE3
Brand : VISHAY/
Date Code : 20+/21+
Qty : 5000000
USD 0
Part NO. : SI5509DC-T1-GE3
Brand : Vishay Siliconix
Date Code : 21+
Qty : 81630
USD 0
Part NO. : SI5509DC-T1-GE3
Brand : VISHAY/
Date Code : 20+
Qty : 360000
USD 0
Part NO. : SI5509DC-T1-GE3
Brand : Vishay Siliconix
Date Code :
Qty : 8000
USD 0
Part NO. : SI5509DC-T1-GE3
Brand : VISHAY/
Date Code : 20+/21+
Qty : 5000000
USD 0
Part NO. : SI5509DC-T1-GE3
Brand : VISHAY/
Date Code : 20+/21+
Qty : 5000000
USD 0
Part NO. : SI5509DC-T1-GE3
Brand : Vishay Siliconix
Date Code : 21+
Qty : 81630
USD 0
Part NO. : SI5509DC-T1-GE3
Brand : VISHAY/
Date Code : 20+
Qty : 360000
USD 0