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【SI5511DCT1E3 Transistors - FETs, MOSFETs - Arrays VISHAY】【ILQ621GBX001】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI5511DCT1E3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

Vishay Siliconix

Description:

MOSFET N/P-CH 30V 4A 1206-8

Series:

TrenchFET

Packaging:

Digi-Reel

FET Type:

N and P-Channel

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

4A, 3.6A

Rds On (Max) @ Id, Vgs:

55 mOhm @ 4.8A, 4.5V

Vgs(th) (Max) @ Id:

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

7.1nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

435pF @ 15V

Power - Max:

3.1W, 2.6W

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-SMD, Flat Lead

Supplier Device Package:

1206-8 ChipFET

Search For SI5511DCT1E3 - SI5511DCT1E3 Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
Region
Company

SI5511DC-T1-E3

SI5511DC-T1-E3 VISHAY11+3000Hong Kong
JFJ Electronics Co.,Limited  13

SI5511DC-T1-E3

SI5511DC-T1-E3 9000China
Hong Kong In Fortune Electronics Co., Limited  12

SI5511DC-T1-E3

SI5511DC-T1-E3 Vishay Siliconix2016+8000China
MY Group (Asia) Limited  13

SI5511DC-T1-E3

SI5511DC-T1-E3 Vishay12+400China
Dopoint Hi-Tech Limited  13

SI5511DC-T1-E3

SI5511DC-T1-E3 VISHAY3000Hong Kong
Hongkong Rixin International Trading Company  2

ILQ621GB-X001

ILQ621GB-X001 Vishay2017+53000China
HONGKONG XINWO TECHNOLOGY ELECTRONICS CO., LIMITED 1

ILQ621GB-X001

ILQ621GB-X001 Vishay Semiconductors15161Hong Kong
HongKong Wanghua Technology Limited 3

ILQ621GB-X001

ILQ621GB-X001 Vishay3000China
TOK HK Electronics Co., Limited3

ILQ621GB

ILQ621GB VISHAY12+5000China
Acon Electronics Limited  11

ILQ621

ILQ621 INF2015+6070China
Bonase Electronics (HK) Co., Limited  12

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ILQ621GBX001 | CL31C270KBCABNC | AT24C02ANSI27 | 68144 | AT24C02API27 | SI5504DCT1E3 | CL31C270KCCNNNC | CL31C271JBCNNNC | 1629T16RDM101T | DM54164J/883B
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