| Part Number: | SI8809EDBT2E1 |
| Product Name: | SI8809EDBT2E1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SI8809EDBT2E1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET P-CH 20V 1.9A MICROFOOT |
| Series: | TrenchFET |
| Packaging: | Tape & Reel (TR) |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | - |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 500mW (Ta) |
| Rds On (Max) @ Id, Vgs: | 90 mOhm @ 1.5A, 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 4-Microfoot |
| Package / Case: | 4-XFBGA |
Part Number
Brand
D/C
Qty
SI8809EDB-T2-E1 VISH 1543
VISH
1543
8197
USD 0
SI8809EDB-T2-E1 VISH 2022
VISH
2022
18500
USD 0
SI8809EDB-T2-E1 Vishay Siliconix
Vishay Siliconix
18000
USD 0
SI8809EDB-T2-E1 VISH 12+
VISH
12+
6000
USD 0
SI8809EDB-T2-E1 VISH 1543
VISH
1543
8197
USD 0
SI8809EDB-T2-E1 VISH 2022
VISH
2022
18500
USD 0
SI8809EDB-T2-E1 Vishay Siliconix
Vishay Siliconix
18000
USD 0
SI8809EDB-T2-E1 VISH 12+
VISH
12+
6000
USD 0
Contact Us
Copyright © 2024 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
