Part Number: | SIA425EDJT1GE3 |
Product Name: | SIA425EDJT1GE3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SIA425EDJT1GE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET P-CH 20V 4.5A SC-70-6 |
Series: | TrenchFET |
Packaging: | Cut Tape (CT) |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Vgs (Max): | ±12V |
FET Feature: | - |
Power Dissipation (Max): | 2.9W (Ta), 15.6W (Tc) |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 4.2A, 4.5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK SC-70-6 Single |
Package / Case: | PowerPAK SC-70-6 |
Part Number
Brand
D/C
Qty
Part NO. : SIA425EDJ-T1-GE3
Brand : VISH
Date Code : 1632
Qty : 2284
USD 0
Part NO. : SIA425EDJ-T1-GE3
Brand : VISHAY
Date Code : 11+
Qty : 3000
USD 0
Part NO. : SIA425EDJ-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 33800
USD 0
Part NO. : SIA425EDJ-T1-GE3
Brand : VISHAY
Date Code : 11+
Qty : 3000
USD 0
Part NO. : SIA425EDJ-T1-GE3
Brand : VISHAY
Date Code : 2022
Qty : 14000
USD 0
Part NO. : SIA425EDJ-T1-GE3
Brand : VISH
Date Code : 1632
Qty : 2284
USD 0
Part NO. : SIA425EDJ-T1-GE3
Brand : VISHAY
Date Code : 11+
Qty : 3000
USD 0
Part NO. : SIA425EDJ-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 33800
USD 0
Part NO. : SIA425EDJ-T1-GE3
Brand : VISHAY
Date Code : 11+
Qty : 3000
USD 0
Part NO. : SIA425EDJ-T1-GE3
Brand : VISHAY
Date Code : 2022
Qty : 14000
USD 0