Part Number: | SIHB12N60EGE3 |
Product Name: | SIHB12N60EGE3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SIHB12N60EGE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET N-CH 600V 12A TO263 |
Series: | - |
Packaging: | Bulk |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 937pF @ 100V |
Vgs (Max): | ±30V |
FET Feature: | - |
Power Dissipation (Max): | 147W (Tc) |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 6A, 10V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
Qty
Part NO. : SIHB12N60E-GE3
Brand : VISHAY/
Date Code : 22+
Qty : 12708
USD 0
Part NO. : SIHB12N60EGE3
Brand : vishay
Date Code : 23+
Qty : 100000
USD 0
Part NO. : SIHB12N60E-GE3
Brand : VISHAY
Date Code :
Qty : 2000
USD 0
Part NO. : SIHB12N60E-GE3
Brand : VISHAY
Date Code : 14+
Qty : 583
USD 0
Part NO. : SIHB12N60E-GE3
Brand : VISHAY/
Date Code : 2022
Qty : 11583
USD 0
Part NO. : SIHB12N60E-GE3
Brand : VISHAY/
Date Code : 22+
Qty : 12708
USD 0
Part NO. : SIHB12N60EGE3
Brand : vishay
Date Code : 23+
Qty : 100000
USD 0
Part NO. : SIHB12N60E-GE3
Brand : VISHAY
Date Code :
Qty : 2000
USD 0
Part NO. : SIHB12N60E-GE3
Brand : VISHAY
Date Code : 14+
Qty : 583
USD 0
Part NO. : SIHB12N60E-GE3
Brand : VISHAY/
Date Code : 2022
Qty : 11583
USD 0