| Part Number: | SIHB20N50EGE3 |
| Product Name: | SIHB20N50EGE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SIHB20N50EGE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 500V 19A TO-263 |
| Series: | - |
| Packaging: | Bulk |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 500V |
| Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1640pF @ 100V |
| Vgs (Max): | ±30V |
| FET Feature: | - |
| Power Dissipation (Max): | 179W (Tc) |
| Rds On (Max) @ Id, Vgs: | 184 mOhm @ 10A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D²PAK (TO-263) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : SIHB20N50E-GE3
Brand : VISH
Date Code : 18+
Qty : 2000
Unit Price :
(USD)
USD
0
Part NO. : SIHB20N50E-GE3
Brand : VISHAY
Date Code : 19+
Qty : 2500
Unit Price :
(USD)
USD
0
Part Number
Brand
D/C
Qty
Part NO. : SIHB20N50E-GE3
Brand : VISHAY/
Date Code :
Qty : 18000
USD 0
Part NO. : SIHB20N50E-GE3
Brand : original new
Date Code : 21+
Qty : 6038
USD 0
Part NO. : SIHB20N50E-GE3
Brand :
Date Code : 22+
Qty : 7050
USD 0
Part NO. : SIHB20N50E-GE3
Brand : VISHAY/
Date Code :
Qty : 18000
USD 0
Part NO. : SIHB20N50E-GE3
Brand : original new
Date Code : 21+
Qty : 6038
USD 0
Part NO. : SIHB20N50E-GE3
Brand :
Date Code : 22+
Qty : 7050
USD 0
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