【IPD25CN10NGBUMA1 Transistors - FETs, MOSFETs - Single Infineon Technologies】Electronic Components In Stock Suppliers in 2019【Price】【Datasheet PDF】USA

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Part Number:

IPD25CN10NGBUMA1

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 100V 35A TO252-3

Series:

OptiMOS

Packaging:

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4V @ 39µA

Gate Charge (Qg) (Max) @ Vgs:

31nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

2070pF @ 50V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

71W (Tc)

Rds On (Max) @ Id, Vgs:

25 mOhm @ 35A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO252-3

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

1 - 5 of 5 Record(s)
IPD25CN10NGBUMA1
 Part NumberBrandD/CQtyCompany

IPD25CN10NGBUMA1

Infineon Technologies1000MY Group (Asia) Limited   14

IPD25CN10NGBUMA1

INFINEON1500003A COMPONENTS LIMITED   2
Warranty

IPD25CN10NG

INFINEON16+20000Yingxinyuan INT'L (Group) Limited    15

IPD25CN10NGATMA1

Infineon Technologies14000MY Group (Asia) Limited   14

IPD25CN10NG

Infineon technologies91Wuhan P&S Information Technology Co., Ltd.   5

Related Part Number

IPD25N06S4L30ATMA1 | IPD30N03S2L10ATMA1 | IPD20N03L | IPD220N06L3GBTMA1 | IPD25N06S4L30ATMA1 | IPD30N03S2L10ATMA1 | IPD30N03S2L20ATMA1 | IPD30N03S4L09 | IPD30N06S2-15 | IPD30N06S2L-13 | IPD30N06S4L23ATMA2
IPD25CN10NGBUMA1 Ref.:
[hkinbatch20181020]
[HGCacheDateZOIPOIZZ]
[HGReferer_STC_Overview]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IPD25CN10NGBUMA1 Related Keywords in 2019 USA

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